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Silicon Carbide Power Device Developer

2 months ago

Shanghai, Shanghai, China Nexperia Full time

About this role

We are seeking a skilled Silicon Carbide Power Device Developer to join our team in Shanghai.

This is a challenging role that involves the development and release of Silicon Carbide (SiC) products.

  • Develop SiC products from product definition to final release for production
  • Responsible for functionality & performance of the final product (incl. chip, package and all related interfaces)
  • Work together with simulations, layout and manufacturing teams
  • Co-operate with internal and external development and production partners

About you

  • University degree in Semiconductor Device Physics or Technology, Microelectronics or equivalent
  • Minimum 5 years of demonstrated working experience in power semiconductor technology
  • Track record in the development of discrete power semiconductors
  • Experience with SiC technology specific requirements on products and production
  • Team player with a strong drive to achieve success
  • Fluency in Chinese and English
  • Good communication skills, both verbal and in writing
  • Willingness to travel to local partners and to Product Group office in Germany

About us

Nexperia is an Equal Opportunity/Affirmative Action Employer.

We offer a dynamic and multi-cultural work environment with a global footprint.